IndiumV3, Main, Repository, bibRecord, 000112

High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors

Identifieur interne : 000112 ( Main/Repository ); précédent : 000111; suivant : 000113

High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors

Auteurs : RBID : Pascal:14-0090003

Descripteurs français

Pascal (Inist)
- Couche mince métallique, Transistor couche mince, Protection environnement, Précurseur, Couche mince, Pyrolyse, Miscibilité, Electrode commande, Oxyde d'indium, Oxyde de zinc, Nanoparticule, Nanomatériau, Semiconducteur, Substrat métal, 8530T, 8107, 8530P.

English descriptors

KwdEn :
- Environmental protection, Gates, Indium oxide, Metallic thin films, Miscibility, Nanoparticle, Nanostructured materials, Precursor, Pyrolysis, Semiconductor materials, Thin film, Thin film transistor, Zinc oxide.

Abstract

The synthesis of versatile, and non-toxic precursors for ambient-air deposition of semiconducting metal-oxide thin films by spray pyrolysis is reported. The resulting thin films yield stable and reproducible performance in thin-film transistors. The precursors are based on reactions of metal salts and an organic ammonium source in water. The precursor preparation is highly versatile with respect to low-level handling requirements (i.e. in air) and miscibility for the synthesis of customized mixed metal oxides. The precursor solutions are deposited by spray pyrolysis and integrated into bottom-gate test structures with staggered source and drain contacts. Indium zinc oxide thin films deposited from a precursor with an [In]/[Zn] ratio of 3:1 exhibit an on-off current ratio of 10⁶with a calculated saturation mobility of 14.1 cm² V^-1 s^-1 ± 1.1 cm² V^-1 s^-1 at a drain voltage of 40 V. The demonstrated route to non-toxic molecular precursors for low-temperature thin-film processing in ambient atmosphere benefits from low cost of educts, environmentally friendly solvents, minimized health risk when compared to nanoparticle processing, and an excellent performance for electronic applications.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000059

Links to Exploration step

Pascal:14-0090003

Le document en format XML

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<author><name sortKey="Oertel, Susanne" uniqKey="Oertel S">Susanne Oertel</name>
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<author><name sortKey="Jank, Michael P M" uniqKey="Jank M">Michael P. M. Jank</name>
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<s2>91058 Erlangen</s2>
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<author><name sortKey="Teuber, Erik" uniqKey="Teuber E">Erik Teuber</name>
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<author><name sortKey="Bauer, Anton J" uniqKey="Bauer A">Anton J. Bauer</name>
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<author><name sortKey="Frey, Lothar" uniqKey="Frey L">Lothar Frey</name>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Cluster of Excellence "Engineering of Advanced Materials" at Friedrich-Alexander Universität Erlangen-Nümberg, Nägelsbachstrasse 49b</s1>
<s2>91052 Erlangen</s2>
<s3>DEU</s3>
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<sZ>5 aut.</sZ>
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<country>Allemagne</country>
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<wicri:noRegion>Nägelsbachstrasse 49b</wicri:noRegion>
<wicri:noRegion>91052 Erlangen</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Friedrich-Alexander-Universität Erlangen-Nürnberg, Lehrstuhl für Elektronische Bauelemente, Cauerstr. 6</s1>
<s2>91058 Erlangen</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>91058 Erlangen</wicri:noRegion>
<wicri:noRegion>Cauerstr. 6</wicri:noRegion>
<wicri:noRegion>91058 Erlangen</wicri:noRegion>
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<publicationStmt><idno type="inist">14-0090003</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0090003 INIST</idno>
<idno type="RBID">Pascal:14-0090003</idno>
<idno type="wicri:Area/Main/Corpus">000059</idno>
<idno type="wicri:Area/Main/Repository">000112</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Environmental protection</term>
<term>Gates</term>
<term>Indium oxide</term>
<term>Metallic thin films</term>
<term>Miscibility</term>
<term>Nanoparticle</term>
<term>Nanostructured materials</term>
<term>Precursor</term>
<term>Pyrolysis</term>
<term>Semiconductor materials</term>
<term>Thin film</term>
<term>Thin film transistor</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche mince métallique</term>
<term>Transistor couche mince</term>
<term>Protection environnement</term>
<term>Précurseur</term>
<term>Couche mince</term>
<term>Pyrolyse</term>
<term>Miscibilité</term>
<term>Electrode commande</term>
<term>Oxyde d'indium</term>
<term>Oxyde de zinc</term>
<term>Nanoparticule</term>
<term>Nanomatériau</term>
<term>Semiconducteur</term>
<term>Substrat métal</term>
<term>8530T</term>
<term>8107</term>
<term>8530P</term>
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<front><div type="abstract" xml:lang="en">The synthesis of versatile, and non-toxic precursors for ambient-air deposition of semiconducting metal-oxide thin films by spray pyrolysis is reported. The resulting thin films yield stable and reproducible performance in thin-film transistors. The precursors are based on reactions of metal salts and an organic ammonium source in water. The precursor preparation is highly versatile with respect to low-level handling requirements (i.e. in air) and miscibility for the synthesis of customized mixed metal oxides. The precursor solutions are deposited by spray pyrolysis and integrated into bottom-gate test structures with staggered source and drain contacts. Indium zinc oxide thin films deposited from a precursor with an [In]/[Zn] ratio of 3:1 exhibit an on-off current ratio of 10<sup>6 </sup>
with a calculated saturation mobility of 14.1 cm<sup>2</sup>
 V<sup>-1</sup>
 s<sup>-1</sup>
 ± 1.1 cm<sup>2</sup>
 V<sup>-1</sup>
 s<sup>-1</sup>
 at a drain voltage of 40 V. The demonstrated route to non-toxic molecular precursors for low-temperature thin-film processing in ambient atmosphere benefits from low cost of educts, environmentally friendly solvents, minimized health risk when compared to nanoparticle processing, and an excellent performance for electronic applications.</div>
</front>
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<fA11 i1="02" i2="1"><s1>JANK (Michael P. M.)</s1>
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<fA60><s1>P</s1>
<s2>C</s2>
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with a calculated saturation mobility of 14.1 cm<sup>2</sup>
 V<sup>-1</sup>
 s<sup>-1</sup>
 ± 1.1 cm<sup>2</sup>
 V<sup>-1</sup>
 s<sup>-1</sup>
 at a drain voltage of 40 V. The demonstrated route to non-toxic molecular precursors for low-temperature thin-film processing in ambient atmosphere benefits from low cost of educts, environmentally friendly solvents, minimized health risk when compared to nanoparticle processing, and an excellent performance for electronic applications.</s0>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>European Materials Research Society (E-MRS) Spring Meeting 2013. Symposium O: Synthesis, processing and characterization of nanoscale multi functional oxide films IV</s1>
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Serveur d'exploration sur l'Indium

High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors

High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors

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